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 U2270B
Read / Write Base Station IC
Description
The U2270B is an IC for IDIC *) read/write base stations in contactless identification and immobilizer systems. The IC incorporates the energy-transfer circuit to supply the transponder. It consists of an on-chip power supply, an oscillator and a coil driver optimized for automotivespecific distances. It also includes all signal-processing circuits which are necessary to form the small input signal into a microcontroller-compatible signal.
Features
D Carrier frequency fosc 100 kHz - 150 kHz D Typical data rate up to 5 kbaud at 125 kHz D Suitable for Manchester and Bi-phase modulation D Power supply from the car battery or from 5-V regulated voltage D Optimized for car immobilizer applications D Tuning capability D Microcontroller-compatible interface D Low power consumption in standby mode D Power-supply output for microcontroller
Applications
D Car immobilizers D Animal identification D Access control D Process control D Further industrial applications
Ordering Information
Extended Type Number U2270B-FP Package SO16 Remarks
Transponder / TAG
Read / write base station
Transp. IC e5530 e5550 e5560
RF field typ. 125 kHz
Osc
Carrier enable
U2270B
NF read channel Data output
MCU
Unlock System
TK5530-PP Figure 1.
*)
9300
IDIC stands for IDentification Integrated Circuit and is a trademark of TEMIC Semiconductors.
Rev. A4, 25-May-00
1 (13)
U2270B
Pin Description
GND 1 Output OE Input MS CFE 2 3 4 5 6 16 15 HIPASS RF Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol GND Output OE Input MS CFE DGND COIL 2 COIL 1 VEXT DVS VBatt Standby VS RF HIPASS Function Ground Data output Data output enable Data input Mode select coil 1: Common mode / Differential mode Carrier frequency enable Driver ground Coil driver 2 Coil driver 1 External power supply Driver supply voltage Battery voltage Standby input Internal power supply (5 V) Frequency adjustment DC decoupling
14 VS 13 Standby 12 VBatt 11 DVS 10 9
9844
DGND 7 COIL2 8
Figure 2. Pinning
VEXT COIL1
Block Diagram
DVS VEXT VS VBatt
Standby Power supply COIL1
=1
MS CFE
COIL2 Driver DGND
&
Oscillator
Frequency adjustment
RF
Output Amplifier Input Lowpass filter Schmitt trigger
9692
&
HIPASS
GND
OE
Figure 3.
2 (13)
Rev. A4, 25-May-00
U2270B
Functional Description
Power Supply (PS)
DVS VEXT VS V Batt Standby
internal supply
9V 25 kW
12 kW 6V
PS
6V
18 V
COILx
DRV
DGND
Figure 4. Equivalent circuit of power supply and antenna driver
11413
The U2270B can be operated with one external supply voltage or with two externally-stabilized supply voltages for an extended driver output voltage or from the 12-V battery voltage of a vehicle. The 12-V supply capability is achieved via the on-chip power supply (see figure 4). The power supply provides two different output voltages, VS and VEXT.
VS is the internal power supply voltage except for the driver circuit. Pin VS is used to connect a block capacitor. VS can be switched off by the Pin Standby. In standby mode, the chip's power consumption is very low. VEXT is the supply voltage of the antenna's pre-driver. This voltage can also be used to operate external circuits, i.e., a microcontroller. In conjunction with an external NPN transistor it also establishes the supply voltage of the antenna coil driver, DVS.
Rev. A4, 25-May-00
3 (13)
U2270B
The following section explains the 3 different operation modes to power the U2270B. 1. One-rail operation All internal circuits are operated from one 5-V power rail. (see figure 5). In this case, VS ,VEXT and DVS serve as inputs. VBatt is not used but should also be connected to that supply rail.
+5 V (stabilized)
3. Battery-voltage operation Using this operation mode, VS and VEXT are generated by the internal power supply (see figure 7). For this mode, an external voltage regulator is not needed. The IC can be switched off via the pin Standby. VEXT supplies the base of an external NPN transistor and external circuits, i.e., a microcontroller (even in Standby mode). Pin VEXT and VBatt are overvoltage protected via internal Zener diodes (see figure 4).The maximum current into the pins is determined by the maximum power dissipation and the maximum junction temperature of the IC.
DVS
VEXT
VS
VBatt Standby
12579
Figure 5.
7 to 16 V
2. Two-rail operation In this application, the driver voltage, DVS, and the pre-driver supply, VEXT, are operated at a higher voltage than the rest of the circuitry to obtain a higher driver-output swing and thus a higher magnetic field, (see figure 6). VS is connected to a 5-V supply, whereas the driver voltages can be as high as 8 V. This operation mode is intended to be used in situations where an extended communication distance is required.
7 to 8 V (stabilized) 5 V (stabilized)
DVS
VEXT
VS
VBatt Standby
12600
Figure 7.
DVS
VEXT
VS
VBatt Standby
12580
Figure 6. Table 1. Characteristics of the various operation modes.
Operation Mode 1. One-rail operation
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5 V 10% 2. Two-rail operation 3. Battery-voltage operation 5 V 10% 7 V to 8 V 6 V to 16 V 6 V to 7 V [4V No Yes 4 (13) Rev. A4, 25-May-00
External Components Required 1 Voltage regulator 1 Capacitor 2 Voltage regulators 2 Capacitors 1 Transistor 2 Capacitors Optional for load-dump protection: 1 Resistor 1 Capacitor
Supply-Voltage Range
Driver Output Voltage Swing [4V
Standby Mode Available No
U2270B
Oscillator (Osc)
The frequency of the on-chip oscillator is controlled by a current fed into the RF input. An integrated compensation circuit ensures a wide temperature and supply-voltageindependent frequency which is selected by a fixed resistor between RF (Pin 15) and VS (Pin 14). For 125 kHz, a resistor value of 110 kW is defined. For other frequencies, use the following formula: R f kW + 14375 -5 f0 kHz This input can be used to adjust the frequency close to the resonance of the antenna. For more details refer to the applicatons and the application note ANT019.
VS RS CIN 210 kW VBias - 0.4 V VBias
12601
VBias + 0.4 V
Input
10 kW
Figure 9. Equivalent circuit of Pin Input
Amplifier (AMP)
Rf
2 kW RF
9695
The differential amplifier has a fixed gain, typically 30. The HIPASS pin is used for dc decoupling. The lower cutoff frequency of the decoupling circuit can be calculated as follows: f cut + 2 p 1 CHP Ri
Figure 8. Equivalent circuit of Pin RF
The value of the internal resistor Ri can be assumed to be 2.5 kW. Recommended values of CHP for selected data rates can be found in the chapter "Applications".
R + - Schmitt trigger
Filter (LPF)
The fully-integrated lowpass filter (4th-order butterworth) removes the remaining carrier signal and high-frequency disturbancies after demodulation. The upper cut-off frequency of the LPF depends on the selected oscillator frequency. The typical value is fOsc/18. That means that data rates up to fOsc/25 are possible if Bi-phase or Manchester encoding is used. A highpass characteristic results from the capacitive coupling at the input Pin 4 as shown in figure 9. The input voltage swing is limited to 2 Vpp. For frequency response calculation, the impedances of the signal source and LPF input (typical 220 kW) have to be considered. The recommended values of the input capacitor for selected data rates are given in the chapter "Applications". Note: After switching on the carrier, the DC voltage of the coupling capacitor changes rapidly. When the antenna voltage is stable, the LPF needs approximately 2 ms to recover full sensitivity.
R LPF VRef
R Ri
R
HIPASS CHP
12578
Figure 10. Equivalent circuit of Pin HIPASS
Rev. A4, 25-May-00
5 (13)
U2270B
Schmitt Trigger
The signal is processed by a Schmitt trigger to suppress possible noise and to make the signal mC compatible. The hysteresis level is 100 mV symmetrically to the DC operation point. The open-collector output is enabled by a low level at OE (Pin 3).
30 mA
7 mA
MS
12603
OE
12602
Figure 12. Equivalent circuit of Pin MS
Figure 11. Equivalent circuit of Pin OE
Driver (DRV)
The driver supplies the antenna coil with the appropriate energy. The circuit consists of two independent output stages. These output stages can be operated in two different modes. In common mode, the outputs of the stages are in phase. In this mode, the outputs can be interconnected to achieve a high-current output capability. Using the differential mode, the output voltages are in anti-phase. Thus, the antenna coil is driven with a higher voltage. For a specific magnetic field, the antenna coil impedance is higher for the differential mode. As a higher coil impedance results in a better system sensitivity, the differential mode should be preferred. The CFE input is intended to be used for writing data into a read/write or a crypto transponder. This is achieved by interrupting the RF field with short gaps. The various functions are controlled by the inputs MS and CFE (refer to the function table). The equivalent circuit of the driver is shown in figure 4.
CFE 30 mA
12604
Figure 13. Equivalent circuit of Pin CFE
6 (13)
Rev. A4, 25-May-00
U2270B
Function Table
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High High OE Low High Output Enabled Disabled Standby Low High U2270B Standby mode Active
CFE Low Low High
MS Low High Low
COIL1 High Low
COIL2 High High
Applications
To achieve the suitable application, consider the powersupply environment and the magnetic-coupling situation. The selection of the appropriate power-supply operation mode depends on the supply environment. If an unregulated supply voltage in the range of V = 7 V to 16 V is available, the internal power supply of the U2270B can be used. In this case, standby mode can be used and an external low-current C can be supplied. If a 5-V supply rail is available, it can be used to power the U2270B. In this case, please check that the voltage is noise-free. An external power transistor is not necessary. The application depends also on the magnetic-coupling situation. The coupling factor mainly depends on the transmission distance and the antenna coils. The following table lists the appropriate application for a given coupling factor. The magnetic coupling factor can be determined using TEMIC Semiconductors' test transponder coil.
The maximum transmission distance is also influenced by the accuracy of the antenna's resonance. Therefore, the recommendations given above are proposals only. A good compromise for the resonance accuracy of the antenna is a value in the range of fres = 125 kHz 3%. Further details concerning the adequate application and the antenna design is provided in chapter "Antenna Design Hints". The application of the U2270B includes the two capacitors CIN and CHP whose values are linearly dependend on the transponder's data rate. The following table gives the appropriate values for the most common data rates. The values are valid for Manchester and Bi-phase code.
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Magnetic Coupling Factor k > 3% k > 1% Appropriate Application Free-running oscillator Diode feedback k > 0.5% k > 0.3% Diode feedback plus frequency altering Diode feedback plus fine frequency tuning The following applications are typical examples. The values of CIN and CHP correspond to the transponder's data rate only. The arrangement to fit the magneticcoupling situation is also independent from other design issues except for one constellation. This constellation, consisting of diode feedback plus fine frequency tuning together with the two-rail power supply, should be used if the transmission distance of d [ 10 cm. Rev. A4, 25-May-00 7 (13)
Data Rate f = 125 kHz f/32 = 3.9 kbit/s f/64 = 1.95 kbit/s
Input Capacitor Decoupling (CIN) Capacitor (CHP) 680 pF 100 nF 1.2 nF 220 nF
U2270B
Application 1
Application using few external components. This application is for intense magnetic coupling only.
110 kW 5V VBatt 47 nF 47 mF DVS VEXT VS VDD
U2270B
RF MS CFE OE STANDBY OUTPUT HIPASS CHP
INPUT CIN 1N4148
Microcontroller
470 kW 1.5 nF R
1.35 mH
COIL1
COIL2 1.2 nF DGND GND VSS
9693
Figure 14. Application circuit
Application 2
Basic application using diode feedback. This application permits higher communication distances than application 1.
BC639 4x 1N4148 22 mF GND 4.7 nF 75 kW 100 kW 43 kW 22 mF 22 mF 360 W 12 V
68 kW
VS RF COIL 2
VEXT
DVS
VBatt MS CFE
VDD
1.2 nF
1.35 mH Antenna 1N4148
82 W COIL 1 Input HIPASS
U2270B
Standby Output OE GND I/O
Microcontroller
CIN 1.5 nF CHP
470 kW
DGND
VSS
12605
Figure 15. Application circuit
8 (13)
Rev. A4, 25-May-00
U2270B
Application 3
This application is comparable to application 2 but alters the operating frequency. This permits higher antenna resonance tolerances and/or higher communication
4x 1N4148 68 kW 5V 4.7 nF 75 kW 100 kW 43 kW VS RF 1 nF COIL 2 1.5 mH Antenna 1N4148 180 pF 100 W 470 kW 1.5 nF CHP CIN Input HIPASS DGND GND 82 W COIL 1 CFE VEXT DVS VBatt MS VDD GND 22 mF 47 nF
distances. This application is preferred if the detecting C is close to the U2270B as an additional C signal controls the adequate operating frequency.
U2270B
Standby Output OE
Microcontroller
VSS
4.7 kW BC846 1.5 kW
12606
Figure 16. Application circuit
Important note: Application examples have not been examined for series use or reliability, and no worst case scenarios have been developed. Customers who adapt any of these proposals must carry out their own testing and be convinced that no negative consequences arise from the proposals.
Rev. A4, 25-May-00
9 (13)
U2270B
Absolute Maximum Ratings
All voltages are referred to GND (Pins 1 and 7). Parameters/Conditions Pin Operating voltage Pin 12 Operating voltage Pins 8, 9, 10, 11 and 14 Symbol VBatt VS, VEXT, DVS, Coil 1, Coil 2 Min. VS -0.3 Typ. Max. 16 8 Unit V V
Range of input and output voltages Pins 3, 4, 5, 6, 15 and 16 Pins 2 and 13 Output current Pin 10 Output current Pin 2 Driver output current Pins 8 and 9 Power dissipation SO16 Junction temperature Storage temperature Ambient temperature
-0.3 -0.3 IEXT IOUT ICoil Ptot Tj Tstg Tamb
-55 -40
VS+0.3 VBatt 10 10 200 380 150 125 105
V mA mA mA mW C C C
Thermal Resistance
Parameters/Conditions Pin Thermal resistance SO16 Symbol RthJA Min. Typ. Max. 120 Unit K/W
Operating Range
All voltages are referred to GND (Pins 1 and 7) Parameters/Conditions Operating voltage Operating voltage Operating voltage Carrier frequency Pin Pin 12 Pin 14 Pin 10 Pin 11 Symbol VBatt VS VEXT DVS fosc Min. 7 4.5 4.5 100 Typ. 12 5.4 Max. 16 6.3 8 150 Unit V V
125
kHz
10 (13)
Rev. A4, 25-May-00
U2270B
Electrical Characteristics
Test conditions (unless otherwise specified): VBatt = 12 V, Tamb = -40 to 105_C Parameters Data output - collector emitter saturation voltage Data output enable - low-level input voltage - high-level input voltage Data input - clamping level low - clamping level high - input resistance - input sensitivity Driver polarity mode - low-level input voltage - high-level input voltage Carrier frequency enable - low-level input voltage - high-level input voltage Operating current Test Conditions / Pins Pin 2 Iout = 5 mA Pin 3 Vil Vih Pin 4 Vil Vih Rin SIN 2 3.8 220 10 V V kW mVpp 0.5 2.4 V V Symbol VCEsat Min. Typ. Max. 400 Unit mV
f = 3 kHz (squarewave) gain capacitor = 100 nF Pin 5
Vil Vih Pin 6 Vil Vih IS
0.2 2.4 0.8 3.0 4.5 9
V V V V mA
Standby current VS - Supply voltage - Supply voltage drift - Output current Driver output voltage - One-rail operation - Battery-voltage operation Vext - Output voltage - Supply voltage drift - Output current - Standby output current Standby input - low-level input voltage - high-level input voltage Oscillator - Carrier frequency Lowpass filter - Cut-off frequency Amplifier - Gain Schmitt trigger - Hysteresis voltage
*)
Pin10, 11, 12 and 14 5-V application without load connected to the coil driver Pin 12 12-V application Pin 14
ISt
30
70
mA
VS dVs/dT IS IL = 100 mA VS, VEXT, VBatt, DVS = 5 V VBatt = 12 V Pins 8 and 9 Pin 10 IC active standby mode Pin 13 Vil Vih RF resistor = 110 kW (application 2), REM 1. Carrier freq. = 125 kHz CHP = 100 nF
*)
4.6 1.8 2.9 3.1 4.6 3.5 0.4
5.4 4.2 3.5 3.6 4.0 5.4 4.2
6.3
V mV/K mA VPP VPP V mV/K mA mA V V kHz kHz
VDRV VDRV VEXT dVEXT/dT IEXT IEXT
4.3 4.7 6.3
0.8 3.1 121 125 7 30 100 129
f0 fcut
mV
REM 1.: In application 1. where the oscillator operates in free-running mode, the IC must be soldered free from distortion. Otherwise, the oscillator frequency may be out of bounds.
Rev. A4, 25-May-00
11 (13)
U2270B
Package Information
Package SO16
Dimensions in mm
10.0 9.85 5.2 4.8 3.7
1.4 0.4 1.27 8.89 16 9 0.25 0.10 0.2 3.8 6.15 5.85
technical drawings according to DIN specifications
13036
1
8
12 (13)
Rev. A4, 25-May-00
U2270B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
1.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
Rev. A4, 25-May-00
13 (13)


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